Manufacturer Wayon introduces new series of Super Junction MOSFETs. The WMOS™ C4 and WMOS™ F2 series are characterized by an ultra-low RDS(on) resistance value of 19 mΩ and 22 mΩ.
Low resistance allows for a significant reduction of losses resulting from component heating and improvement of the gate switching speed. It is worth noting that as the voltage rises, the resistance value increases significantly, so obtaining such a low resistance for a 600V transistor is a very good result.
The main applications for a given technology are electric vehicle chargers and products requiring high energy efficiency.
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